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january 2017 docid030126 rev 1 1 / 13 this is information on a product in full production. www.st.com STS8N6LF6AG automotive - grade n - channel 60 v, 21 m typ., 8 a stripfet? f6 power mosfet in a n so - 8 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STS8N6LF6AG 60 v 24 m 8 a 3.2 w ? aec - q101 qualified ? very low on - resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss ? logic level applications ? switching applications de scription this device is an n - channel power mosfet developed using the stripfet? f6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: device summary order code marking package packing STS8N6LF6AG 8n6lf6 so - 8 tape and reel
contents STS8N6LF6AG 2 / 13 docid030126 rev 1 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 so - 8 package information ................................ ................................ 9 4.2 so - 8 packing informat ion ................................ ................................ 11 5 revision history ................................ ................................ ............ 12
STS8N6LF6AG electrical ratings docid030126 rev 1 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 60 v v gs gate - source voltage 20 v i d (1) drain current (continuous) at t amb = 25 c 8 a drain current (continuous) at t amb = 100 c 5.8 i dm (2) drain current (pulsed) 32 a p tot total dissipation at t amb = 25 c 3.2 w t stg storage temperature range - 55 to 175 c t j operating junction temperature range notes: (1) when mounted on a 1 - inch2 fr - 4, 2 oz copper board, t < 10 s. (2) pulse width is limited by safe operating area table 3: thermal data symbol parameter value unit r thj - amb (1) thermal resistance junction - ambient 47 c/w notes: (1) when mounted on a 1 - inch2 fr - 4, 2 oz copper board, t < 10 s. table 4: avalanche characteristics symbol parameter value unit i av avalanche current, not repetitive 6 a e as (1) single pulse avalanche energy 72 mj notes: (1) s tarting t j = 25 c, i d = i av , v dd = 43.5 v.
electrical characteristics STS8N6LF6AG 4 / 13 docid030126 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 250 a 60 v i dss zero gate voltage drain current v gs = 0 v, v ds = 60 v 1 a i gss gate - body leakage current v ds = 0 v, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 4 a 21 24 m v gs = 4.5 v, i d = 4 a 22 26 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v - 1340 - pf c oss output capacitance - 90 - c rss reverse transfer capacitance - 60 - q g total gate charge v dd = 30 v, i d = 8 a, v gs = 10 v (see figure 14: "test circuit for gate charge behavior" ) - 27 - nc q gs gate - source charge - 4.6 - q gd gate - drain charge - 4.3 - table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 30 v, i d = 4 a, r g = 4.7 , v gs = 10 v (see figure 13: "test circuit for resistive load switching times" and figure 18: "switching time waveform" ) - 9.6 - ns t r rise time - 20 - t d(off) turn - off delay time - 56 - t f fall time - 7 -
STS8N6LF6AG electrical characteristics docid030126 rev 1 5 / 13 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 8 a i sdm (1) source - drain current (pulsed) - 32 a v sd (2) forward on voltage v gs = 0 v, i sd = 8 a - 1.3 v t rr reverse recovery time i sd = 8 a, di/dt = 100 a/s, v dd = 48 v, t j = 25 c (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 22.5 ns q rr reverse recovery charge - 22.2 nc i rrm reverse recovery current - 2.0 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STS8N6LF6AG 6 / 13 docid030126 rev 1 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STS8N6LF6AG electrical characteristics docid030126 rev 1 7 / 13 figure 8 : capacitance variations figure 9 : normalized gate thresho ld voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v (br)dss vs temperature figure 12 : source - drain diode forward characteristics
test circuits STS8N6LF6AG 8 / 13 docid030126 rev 1 3 test circuits figure 13 : test circuit for resistive load switching times figure 14 : test circuit for gate charge behavior figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
STS8N6LF6AG package information docid030126 rev 1 9 / 13 4 package information in order to meet environmental requirements, st offers these de vices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 so - 8 package information figure 19 : so - 8 package outline
package information STS8N6LF6AG 10 / 13 docid030126 rev 1 table 9: so - 8 mechanical data dim. mm min. typ. max. a 1.75 a1 0.10 0.25 a2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 d 4.80 4.90 5.00 e 5.80 6.00 6.20 e1 3.80 3.90 4.00 e 1.27 h 0.25 0.50 l 0.40 1.27 l1 1.04 l2 0.25 k 0 8 ccc 0.10 figure 20 : so - 8 recommended footprint (dimensions are in mm)
STS8N6LF6AG package information docid030126 rev 1 11 / 13 4.2 so - 8 packing information figure 21 : so - 8 tape and reel dimensions table 10: so - 8 tape and reel mechanical data dim. mm min. typ. max. a - 330 c 12.8 13.2 d 20.2 n 60 t 22.4 ao 8.1 8.5 bo 5.5 5.9 ko 2.1 2.3 po 3.9 4.1 p 7.9 8.1
revision history STS8N6LF6AG 12 / 13 docid030126 rev 1 5 revision history table 11: document revision history date revision changes 24 - jan - 2017 1 first release
STS8N6LF6AG docid030126 rev 1 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2017 stmicroelectronics C all rights reserved

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